M. A. Reshchikov, R. M. Sayeed, Ü. Özgür, D. O. Demchenko, J. D. McNamara, V. Prozheeva, F. Tuomisto, H. Helava, A. Usikov, and Yu. Makarov, Unusual properties of the RL3 center in GaN, Phys. Rev. B 100, 045204 (2019). 

M. A. Reshchikov, M. Vorobiov, D. O. Demchenko, Ü. Özgür, H. Morkoç, A. Lesnik, M. P. Hoffmann, F. Hörich, A. Dadgar, and A. Strittmatter, Two charge states of the CN acceptor in GaN: Evidence from photoluminescence, Phys. Rev. B 98, 125207 (2018). 

M. A. Reshchikov, P. Ghimire, and D. O. Demchenko, Magnesium acceptor in gallium nitride: I. Photoluminescence from Mg-doped GaN, Phys. Rev. B 97, 205204 (2018). 

M. A. Reshchikov, A. Usikov, H. Helava, Yu. Makarov, V. Prozheeva, I. Makkonen, F. Tuomisto, J. H. Leach, and K. Udwary, Evaluation of the concentration of point defects in GaN, Scientific Reports 7, 9297 (2017). 

M. A. Reshchikov, M. Toporkov, J. D. McNamara, V. Avrutin, H. Morkoç, A. Usikov, H. Helava, and Yu. Makarov, Determination of the electron-capture coefficients and the concentration of free electrons in GaN from photoluminescence, Scientific Reports 6, 37511 (2016).

M. A. Reshchikov, J. D. McNamara, F. Zhang, M. Monavarian, A. Usikov, H. Helava, Yu. Makarov, and H. Morkoç, Zero-phonon line and fine structure of the yellow luminescence band in GaN, Phys. Rev. B 94, 035201 (2016).

. A. Reshchikov, J. D. McNamara, A. Usikov, H. Helava, and Yu. Makarov, Optically-generated giant traps in high-purity GaN, Phys. Rev. B 93, 081202(R) (2016).

M. A. Reshchikov, D. O. Demchenko, J. D. McNamara, S. Fernández-Garrido, and R. Calarco, Green luminescence in Mg-doped GaN, Phys. Rev. B 90, 035207 (2014).

M. A. Reshchikov, Time-resolved photoluminescence from defects in GaN, J. Appl. Phys. 115, 103503 (2014).   

M. A. Reshchikov, Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors, J. Appl. Phys. 115, 012010 (2014).

M. A. Reshchikov, M. A. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, and A.Waag, Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Zn and Si, J. Appl. Phys. 111, 073106 (2012).

M. A. Reshchikov, A. Kvasov, T. McMullen, M. F. Bishop, A. Usikov, V. Soukhoveev, and V. A. Dmitriev, Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN, Phys. Rev. B 84, 075212 (2011).

M. A. Reshchikov, M. Foussekis, and A. A. Baski, Surface photovoltage in undoped n-type GaN, J Appl. Phys. 107, 113535 (2010).

M. A. Reshchikov and H. Morkoç, Luminescence properties of defects in GaN, J. Appl. Phys. 97, 061301 (2005).