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Selected Publications
  • M. A. Reshchikov, R. M. Sayeed, Ü. Özgür, D. O. Demchenko, J. D. McNamara, V. Prozheeva, F. Tuomisto, H. Helava, A. Usikov, and Yu. Makarov, Unusual properties of the RL3 center in GaN, Phys. Rev. B 100, 045204 (2019). 

  • M. A. Reshchikov, M. Vorobiov, D. O. Demchenko, Ü. Özgür, H. Morkoç, A. Lesnik, M. P. Hoffmann, F. Hörich, A. Dadgar, and A. Strittmatter, Two charge states of the CN acceptor in GaN: Evidence from photoluminescence, Phys. Rev. B 98, 125207 (2018). 

  • M. A. Reshchikov, P. Ghimire, and D. O. Demchenko, Magnesium acceptor in gallium nitride: I. Photoluminescence from Mg-doped GaN, Phys. Rev. B 97, 205204 (2018). 

  • M. A. Reshchikov, A. Usikov, H. Helava, Yu. Makarov, V. Prozheeva, I. Makkonen, F. Tuomisto, J. H. Leach, and K. Udwary, Evaluation of the concentration of point defects in GaN, Scientific Reports 7, 9297 (2017). 

  • M. A. Reshchikov, M. Toporkov, J. D. McNamara, V. Avrutin, H. Morkoç, A. Usikov, H. Helava, and Yu. Makarov, Determination of the electron-capture coefficients and the concentration of free electrons in GaN from photoluminescence, Scientific Reports 6, 37511 (2016).

  • M. A. Reshchikov, J. D. McNamara, F. Zhang, M. Monavarian, A. Usikov, H. Helava, Yu. Makarov, and H. Morkoç, Zero-phonon line and fine structure of the yellow luminescence band in GaN, Phys. Rev. B 94, 035201 (2016).

  • . A. Reshchikov, J. D. McNamara, A. Usikov, H. Helava, and Yu. Makarov, Optically-generated giant traps in high-purity GaN, Phys. Rev. B 93, 081202(R) (2016).

  • M. A. Reshchikov, D. O. Demchenko, J. D. McNamara, S. Fernández-Garrido, and R. Calarco, Green luminescence in Mg-doped GaN, Phys. Rev. B 90, 035207 (2014).

  • M. A. Reshchikov, Time-resolved photoluminescence from defects in GaN, J. Appl. Phys. 115, 103503 (2014).   

  • M. A. Reshchikov, Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors, J. Appl. Phys. 115, 012010 (2014).

  • M. A. Reshchikov, M. A. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, and A.Waag, Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Zn and Si, J. Appl. Phys. 111, 073106 (2012).

  • M. A. Reshchikov, A. Kvasov, T. McMullen, M. F. Bishop, A. Usikov, V. Soukhoveev, and V. A. Dmitriev, Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN, Phys. Rev. B 84, 075212 (2011).

  • M. A. Reshchikov, M. Foussekis, and A. A. Baski, Surface photovoltage in undoped n-type GaN, J Appl. Phys. 107, 113535 (2010).

  • M. A. Reshchikov and H. Morkoç, Luminescence properties of defects in GaN, J. Appl. Phys. 97, 061301 (2005).

All publications

©2014 Reshchikov

Dr. Michael A. Reshchikov


Professor,     Physics Department

Virginia Commonwealth University

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